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Transistor; Vishay; SI2308BDS-T1-GE3

Transistor; unipolar; SI2308BDS-T1-GE3; N-MOSFET; 2,3A; 60V; 1,65W; 192mOhm; SOT23; surface mounted (SMD); Vishay; RoHS
 Item 
Transistor; unipolar; SI2308BDS-T1-GE3; N-MOSFET; 2,3A; 60V; 1,65W; 192mOhm; SOT23; surface mounted (SMD); Vishay; RoHS
Item ID: 41291
Item ID: 41291
Quantity: 100 pc
MOQ: 10
Multiple: 10
Quantity [ pc ]Net price
PLN
10+1,8490
25+1,5408
50+1,2840
100+1,2190
500+1,1540
1000+1,0890
Quantity:
 Details 
NameTransistor
Transistor kindunipolar
SymbolSI2308BDS-T1-GE3
Transistor typeN-MOSFET
Drain current2,3A
Drain-source voltage60V
Power1,65W
On-state resistance192mOhm
CaseSOT23
Mountingsurface mounted (SMD)
Featuresnot applicable
ManufacturerVishay
Packageunspecified
CertificatesRoHS
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