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Transistor; Infineon; IPP086N10N3GXKSA1

Transistor; unipolar; IPP086N10N3GXKSA1; N-MOSFET; 80A; 120V; 187W; 7,6mOhm; TO220; through hole (THT); Infineon; RoHS; 086N10N
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 Item 
Transistor; unipolar; IPP086N10N3GXKSA1; N-MOSFET; 80A; 120V; 187W; 7,6mOhm; TO220; through hole (THT); Infineon; RoHS; 086N10N
Item ID: 41013
Item ID: 41013
Quantity: 63 pc
MOQ: 1
Multiple: 1
Quantity [ pc ]Net price
PLN
1+5,61
2+4,49
10+3,59
100+3,37
500+3,15
Quantity:
 Details 
NameTransistor
Transistor kindunipolar
SymbolIPP086N10N3GXKSA1
Transistor typeN-MOSFET
Drain current80A
Drain-source voltage120V
Power187W
On-state resistance7,6mOhm
CaseTO220
Mountingthrough hole (THT)
Featuresnot applicable
ManufacturerInfineon
Packageunspecified
CertificatesRoHS
Marking086N10N
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